Title:
SEMICONDUCTOR MEMORY CELL AND MANUFACTURE OF CELL SEPARATING REGION THEREOF
Document Type and Number:
Japanese Patent JP3511267
Kind Code:
B2
Abstract:
PURPOSE: To separate groove-shaped cells in which a current leakage of an edge is small.
CONSTITUTION: Each oblique active region 15 is formed of a region along a line segment for connecting one bit line contact hole 14 to capacitor contact holes 13, 13 adjacent at both sides. The adjacent holed 13 of the holes 13 included in each region 15 are made to exist through one bit line 11 or one word line 12. Bit line contact holes 14 included in the region 15 adjacent in a direction of the line 12 are made to exist through the one word line 12. A cell separating region 16 is formed of a cell separating groove and an insulating film to be filled to a level or more of the surface of a semiconductor substrate in the groove. Thus, the edge of the groove is covered with the insulating film to reduce a current leakage. The interval of the regions 16 is formed the same as above to easily separate the groove-shaped cells from one another.
Inventors:
Kotaki, Hiroshi
Application Number:
JP18091091A
Publication Date:
March 29, 2004
Filing Date:
July 22, 1991
Export Citation:
Assignee:
SHARP CORP
International Classes:
H01L27/10; H01L21/8242; H01L27/108; (IPC1-7): H01L21/8242; H01L27/108
Attorney, Agent or Firm:
青山 葆 （外１名）