Title:
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
Document Type and Number:
Japanese Patent JP2015056485
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor memory device that uses a ferroelectric film and allows random access.SOLUTION: A semiconductor memory device includes: a semiconductor layer 10; a gate electrode 12a; a ferroelectric film 18 provided between the semiconductor layer and the gate electrode; a first-conductivity-type first impurity region 20 provided in the semiconductor layer on one side of the gate electrode; a second-conductivity-type second impurity region 22 provided in the semiconductor layer on the other side of the gate electrode; a first-conductivity-type third impurity region 24 provided in the semiconductor layer sandwiched between the first impurity region and the second impurity region so as to face the gate electrode, and having a first-conductivity-type impurity concentration lower than that of the first impurity region; first wiring 14 connected to the first impurity region through a connection portion 14a being in contact with the first impurity region; and second wiring 16 connected to the second impurity region through a connection portion 16a being in contact with the second impurity region.
Inventors:
YAMADA ARINORI
ASAO YOSHIAKI
ASAO YOSHIAKI
Application Number:
JP2013188368A
Publication Date:
March 23, 2015
Filing Date:
September 11, 2013
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/8246; H01L27/105
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Mitsuyuki Matsuyama
Akira Sudo
Mitsuyuki Matsuyama