To reduce a resistance value of a capacitor after a breakdown without breaking a conduction in a semiconductor memory device utilizing a dielectric breakdown of the capacitor.

The semiconductor memory device comprises a variable voltage source 1, the capacitor 2 connected to the voltage source 1, an overcurrent suppressing circuit 5, having a parallel connecting circuit of a first resistor 3 and a second resistor 4 having a larger resistance value than that of the first resistor 3, and a controller 8 connected to the suppressing circuit 5. A high voltage is applied to the source 1, so that the capacitor 2 dielectric breaks down, and a large current flows to the resistor 3. Since the resistor 3 is disconnected by the current, damages due to the large current will not occur at the other part of the circuit. Even if the resistor 3 is disconnected, the entire circuit is not disconnected due to the presence of the resistor 4 which has a large resistance.