Title:
SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
Japanese Patent JP2019053656
Kind Code:
A
Abstract:
To improve reliability.SOLUTION: A semiconductor memory device includes a first terminal 30, multiple first and second output buffers 50 and 51, a register 41, first pre-drivers 47 including first transistors 65-67 which operate in response to first signal RONNOorg, second pre-drivers 48 including second transistors 71-73 which operate in response to second signal RONPOorg, a first output control circuit 44 which can select the first pre-drivers 47 in accordance with third signal RONPO_OCD obtained by converting the second signal RONPOorg, a second output control circuit 45 which can select the second pre-drivers 48 in accordance with fourth signal RONNO_OCD obtained by converting the first signal RONNOorg, and a third output control circuit 43.SELECTED DRAWING: Figure 4
Inventors:
MURAOKA KAZUYOSHI
MASUDA MASAMI
MATSUNO JUNYA
KONO MASATOSHI
SHIMIZU ARITAKE
MASUDA MASAMI
MATSUNO JUNYA
KONO MASATOSHI
SHIMIZU ARITAKE
Application Number:
JP2017178830A
Publication Date:
April 04, 2019
Filing Date:
September 19, 2017
Export Citation:
Assignee:
TOSHIBA MEMORY CORP
International Classes:
G06F12/00; G11C7/10; G11C7/22; H03K19/0175; H03K19/0185
Attorney, Agent or Firm:
Kurata Masatoshi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken