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Patent Searching and Data


Title:
SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
Japanese Patent JP3820330
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a semiconductor memory device such as a flash memory device for obtaining a program verification voltage that is requested by a program verification operation without any charge loss when an operation mode changes from program operation to the program verification operation.
SOLUTION: A charge sharing circuit 240 is provided while it is connected to the output of a high-voltage generator 180. The charge sharing circuit 240 performs charge sharing by the load capacitor of a word line with a program voltage that is supplied during program operation and a capacitor 115 of the charge sharing circuit 240 in response to a discharge enable signal DIS and lowers a word line voltage to a program verification voltage without any charge loss.


Inventors:
Choi
Hayashi Lake
Application Number:
JP26217999A
Publication Date:
September 13, 2006
Filing Date:
September 16, 1999
Export Citation:
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Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
G11C16/04; G11C16/06; G11C16/12; G11C16/34; (IPC1-7): G11C16/04; G11C16/06
Domestic Patent References:
JP10241385A
Attorney, Agent or Firm:
Makoto Hagiwara