SEMICONDUCTOR MEMORY DEVICE - Samsung Electronics Co.,Ltd.

Title:

SEMICONDUCTOR MEMORY DEVICE

Document Type and Number:

Japanese Patent JP3820330

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide a semiconductor memory device such as a flash memory device for obtaining a program verification voltage that is requested by a program verification operation without any charge loss when an operation mode changes from program operation to the program verification operation.
SOLUTION: A charge sharing circuit 240 is provided while it is connected to the output of a high-voltage generator 180. The charge sharing circuit 240 performs charge sharing by the load capacitor of a word line with a program voltage that is supplied during program operation and a capacitor 115 of the charge sharing circuit 240 in response to a discharge enable signal DIS and lowers a word line voltage to a program verification voltage without any charge loss.

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Inventors:

Choi
Hayashi Lake

Application Number:

JP26217999A

Publication Date:

September 13, 2006

Filing Date:

September 16, 1999

Export Citation:

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Assignee:

Samsung Electronics Co.,Ltd.

International Classes:

G11C16/04; G11C16/06; G11C16/12; G11C16/34; (IPC1-7): G11C16/04; G11C16/06

Domestic Patent References:

JP10241385A

Attorney, Agent or Firm:

Makoto Hagiwara

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