PURPOSE: To stabilize the resistance value of a capacitor electrode by a method wherein a high-melting-point metal silicide or a high-melting-point metal is used as an electrode material for a groove-shaped capacitor cell for a semiconductor memory element.

CONSTITUTION: A cylindrical groove 13 is formed in a silicon substrate 11. SiO2, 14 is formed on the inside of the groove 13 and on the surface of the substrate 11; it is patterned; and a diffusion layer 12 for cell contact use is formed. Then, a film composed of tungsten silicide (WSix) or tungsten (W) is formed as an electrode. When the film is formed, an apparatus wherein a film is formed while the surface of a film is being irradiated with, e.g. rare-gas ions in the film formation operation is used; the groove 13 is buried. Then, the film composed of WSix or W 15 is etched wholly; the groove 13 and a cell-contact opening part are patterned. Then, a silicon nitride film 16 is grown as a capacitor dielectric; it is patterned; and a polycrystalline silicon film 17 is formed on it. Thereby, the resistance value of a capacitor electrode can be stabilized.