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Title:
SEMICONDUCTOR MEMORY
Document Type and Number:
Japanese Patent JP2002208274
Kind Code:
A
Abstract:

To provide a semiconductor memory in which a high speed cycle time is attained while improving the operation convenience.

This device is provided with a first memory operation in which read or write of stored information is performed for a memory cell requiring periodic refresh-operation for holding stored information, and a time-multi-mode in which a second memory operation being a refresh-operation is performed before or after the first memory operation when the second memory operation being different from the first memory operation and specified by an address and refresh-operation conflict temporally. The shortest access time required for the first memory operation and the second memory operation or the refresh- operation performed before or after that is made shorter than a time obtained by adding a time required for the first memory operation and a time required for the second memory operation or the refresh-operation, on condition that stored information of the memory cell is not affected one another in the first memory operation and the second memory operation or the refresh-operation.


Inventors:
YAHATA HIDEJI
HORIGUCHI SHINJI
NAKAGOME YOSHINOBU
SAITO YOSHIKAZU
Application Number:
JP2001297009A
Publication Date:
July 26, 2002
Filing Date:
September 27, 2001
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
G11C11/401; G11C11/406; G11C11/407; G11C11/409; (IPC1-7): G11C11/406; G11C11/407; G11C11/409
Attorney, Agent or Firm:
Tokuwaka Mitsumasa