To quickly reduce a high-level voltage of a word line to a desired value without increasing power consumption.

A semiconductor memory includes a static memory cell, a word line connected to the transfer transistor of the static memory cell, a word driver for activating the word line, a first resistance part for connecting the word line to a low-level voltage line so as to reduce the high-level voltage of the word line corresponding to the activation of the word line and releasing the connection between the word line and the low-level voltage line after a first period from the activation of the word line, a second resistance part for connecting the word line to the high-level voltage line during at least a second period excluding the first period in the activation period of the word line, and a third resistance part for connecting the word line to the low-level voltage line during the second period and having on-resistance higher than that of the first resistance part. The high-level voltage of the word line during the second period is set lower than the voltage of the high-level voltage line by the resistance division of the second and third resistance parts.