半導体ナノ粒子、及びコア／シェル型半導体ナノ粒子

Title:

半導体ナノ粒子、及びコア／シェル型半導体ナノ粒子

Document Type and Number:

Japanese Patent JP7264064

Kind Code:

B2

Abstract:

An object of the present invention is to provide semiconductor nanoparticles having high quantum efficiency (QY) and a narrow full width at half maximum (FWHM). Semiconductor nanoparticles according to an embodiment of the present invention are semiconductor nanoparticles including at least, In, P, Zn and S, wherein the semiconductor nanoparticles include the components other than In in the following ranges: 0.50 to 0.95 for P, 0.30 to 1.00 for Zn, 0.10 to 0.50 for S, and 0 to 0.30 for halogen, in terms of molar ratio with respect to In.

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Inventors:

Takashi Moriyama
Ryosuke Motoyoshi

Application Number:

JP2019561589A

Publication Date:

April 25, 2023

Filing Date:

December 19, 2018

Export Citation:

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Assignee:

Shoei Chemical Industry Co., Ltd.

International Classes:

C01B25/14; B82Y20/00; B82Y30/00; C09K11/72

Foreign References:

US20170306227
US20170179338
EP3184603A1
WO2017188300A1

Attorney, Agent or Firm:

Masami Sakai
Yoshikuni Suda

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