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Title:
SEMICONDUCTOR NON-VOLATILE STORAGE DEVICE
Document Type and Number:
Japanese Patent JPH05314799
Kind Code:
A
Abstract:

PURPOSE: To enable performing a burn-in test for a writing circuit during sufficient time without breaking a memory transistor when screening of the initial failure of the writing circuit is performed.

CONSTITUTION: A writing circuit 2 and a memory transistor 1 are separable, bias voltage required for writing is impressed to the memory transistor 1 from the writing circuit 2 at the time of normal writing operation, and writing is performed. On the other hand, the memory transistor 1 is separated from the writing circuit 2 at the time of the burn-in test, bias voltage is made not to be impressed, and writing is not performed.


Inventors:
HATAKEYAMA SHINICHI
Application Number:
JP11453592A
Publication Date:
November 26, 1993
Filing Date:
May 07, 1992
Export Citation:
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Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
G11C17/00; G11C29/00; G11C29/06; (IPC1-7): G11C29/00; G11C17/00
Attorney, Agent or Firm:
Akira Kobiji (2 outside)



 
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