PURPOSE: To obtain the semiconductor nonvolatile RAM of a low power consumption and of a low price by constituting it by connecting a nonvolatile MOS capacitor to a volatile RAM through a selection transistor.

CONSTITUTION: An N+ region 2, which is the output terminal Q of the volatile RAM, that two invertors are connected in series, and is the source region of a selection gate transistor (TR) T1, is formed on the surface of a P-type semiconductor substrate 1, and the selection gate TR T1, consisting of a selection gate insulation film 3 and a selection gate electrode 5, is connected in series, and further, the nonvolatile MOS capacitor C, consisting of a gate insulation film 4, a floating gate electrode 6, a control gate electrode 8 and an erasing terminal 10, is connected in series. Thus, because the power consumption at the time of a storing and a recall is small, and a structure is simple, the nonvolatile RAM of a low price and a low power consumption can be realized.