Title:
SEMICONDUCTOR PACKAGE
Document Type and Number:
Japanese Patent JPH03211860
Kind Code:
A
Abstract:
PURPOSE: To make it possible to obtain a package using a pad of a heat conductivity and electrical insulation properties by making a pad contain the materials selected from a group consisting of an aluminum nitride subjected to plasma deposition, a diamond subjected to vacuum evaporation, an alumina subjected to plasma deposition and a boron nitride subjected to plasma deposition. CONSTITUTION: A semiconductor package 10 has a heat sink 20 along with a capacitor 30, a mounting pad 40 is mounted to the heat sink 20 and a semiconductor 50 is mounted to the pad 40. The pad 40 can be made of some different materials and the useful materials among the materials are a boron nitride(BN), a diamond, an aluminum nitride(AlN) and an aluminum oxide (AlO3 ). The BN, the AlN and the Al2 O3 are adhered to the pad by plasma deposition and the diamond is adhered to the pad by vacuum evaporation as a thin coating. Thereby, a new semiconductor package, which has the pad of a heat conductivity and electrical insulation properties and is used for a high-frequency transistor, is obtained.
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Inventors:
GIYASUPAA EI BUTERA
Application Number:
JP31816390A
Publication Date:
September 17, 1991
Filing Date:
November 26, 1990
Export Citation:
Assignee:
SGS THOMSON MICROELECTRONICS
International Classes:
H01L23/02; H01L23/373; H01L23/04; H01L23/64; H01L23/66; (IPC1-7): H01L23/04
Attorney, Agent or Firm:
Mitsuteru Soga (2 outside)