Title:
SEMICONDUCTOR PHOTO DETECTING ELEMENT
Document Type and Number:
Japanese Patent JPS59143381
Kind Code:
A
Abstract:
PURPOSE:To reduce the capacitance and thus enable high speed response by forming the second conductivity type impurity doped region between high concentration conductive regions of the first and second conductivities formed in opposition in comb teeth form at a fixed period. CONSTITUTION:After forming an N type InGaAs layer 2 on a semi-insulation InP substrate 1, a high concentration N<+> layer 3 and a high concentration P<+> layer 4 are so formed as to be opposed to each other. Next, the P-type conductive layer 5 is formed in comb teeth form between the layers 3 and 4. In this case, the layer 5 is formed with the period of (d) which satisfies the formula. In the formula, simbols epsilonO and epsilonS represent vacuum dielectric constant and semiconductor specific dielectric constant, respectively; N1 and N2 the carrier concentration of the layer 3 and that of the layer 5, respectively; V a reverse bias impressed voltage, and q a unit charge. When thus constructed, since depletion advances from the interface between the N layer 2 and the P layer 5, it is possible to deplete completely a photo receiving part between the layers 3 and 4 by a low impressed voltage. Accordingly, the capacitance in the case of complete depletion becomes sufficiently small, and then higher speed response is enabled.
Inventors:
TORIKAI TOSHITAKA
Application Number:
JP1640483A
Publication Date:
August 16, 1984
Filing Date:
February 03, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L31/10; H01L31/0352; H01L31/103; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Uchihara Shin