SEMICONDUCTOR PHOTOELECTRONIC DEVICE - SAMSUNG ELECTRONICS CO LTD

Title:

SEMICONDUCTOR PHOTOELECTRONIC DEVICE

Document Type and Number:

Japanese Patent JP2004140370

Kind Code:

A

Abstract:

To provide a high-efficiency semiconductor photoelectronic device whose durability and reliability are enhanced by effectively increasing light limiting factors.

The semiconductor photoelectronic device is provided with an active layer, upper and lower waveguide layers respectively provided above and below the active layer, upper and lower cladding layers respectively provided above and below the sandwich composed of the active layer and the waveguide layers, and a substrate for supporting the deposited structure. A light limiting layer is provided between the active layer and each of the upper and lower waveguide layers, whose energy gap is smaller than that of the corresponding waveguide layer but larger than that of the active layer. Thus, a mode leakage is decreased and suppressed, and in addition, optical confinement factor is increased.

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Inventors:

RI SEIDAN
HA KYOUNG-HO
SAKONG TAN

Application Number:

JP2003356114A

Publication Date:

May 13, 2004

Filing Date:

October 16, 2003

Export Citation:

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Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

H01S5/30; H01S5/00; H01S5/20; H01S5/323; H01S5/343; H01S5/32; (IPC1-7): H01S5/20; H01S5/343

Domestic Patent References:

JPH11340580A	1999-12-10
JP2002270971A	2002-09-20
JP2000151023A	2000-05-30
JPH08213699A	1996-08-20

Attorney, Agent or Firm:

Mikio Hatta
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii

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