Title:
SEMICONDUCTOR PORCELAIN CAPACITOR
Document Type and Number:
Japanese Patent JPH05335178
Kind Code:
A
Abstract:
PURPOSE: To restrain a reduction-reoxidation semiconductor porcelain capacitor from decreasing in capacitance and increasing in tan δ in a high frequency region.
CONSTITUTION: A dielectric layer 2 is formed on all the surface of a cylindrical semiconductor porcelain 1, and a pair of capacitor electrode layers 3 and 4 and a conductor layer 5 are formed thereon. The capacitor electrode layer 3 and 4 are provided to the outer circumferential surface of the semiconductor porcelain 1, and the conductor layer 5 is formed of the inner circumferential surface of the porcelain 1. the conductor layer 5 is made to function as a bypass of the semiconductor porcelain 1.
Inventors:
TANAKA KIYOSHI
IGUCHI YOSHIAKI
SAITO MAKOTO
IGUCHI YOSHIAKI
SAITO MAKOTO
Application Number:
JP16399892A
Publication Date:
December 17, 1993
Filing Date:
May 29, 1992
Export Citation:
Assignee:
TAIYO YUDEN KK
International Classes:
H01G4/12; (IPC1-7): H01G4/12; H01G4/12
Domestic Patent References:
| JPH03280515A | 1991-12-11 | |||
| JPS6048228B2 | 1985-10-25 |
Attorney, Agent or Firm:
Takano Noritsuji