Title:
半導体粉末およびその製造方法
Document Type and Number:
Japanese Patent JP5823293
Kind Code:
B2
Abstract:
The present invention provides a semiconductor powder composed of Cu-M-Sn—S in a single phase wherein M is at least one selected from the group consisting of Zn, Co, Ni, Fe and Mn, the powder being obtained by wet synthesis, and a method for producing this semiconductor powder. According to the present invention, it is possible to provide, in a simple way, a high-grade semiconductor powder composed of a single-phase Cu-M-Sn—S such as CZTS.
Inventors:
Toruya Mitsumoto
Yuichi Abu
Yuichi Abu
Application Number:
JP2011525824A
Publication Date:
November 25, 2015
Filing Date:
June 03, 2010
Export Citation:
Assignee:
Mitsui Mining & Smelting Co., Ltd.
International Classes:
C01G19/00; C01G45/00; C01G49/12; C01G51/00; C01G53/11
Domestic Patent References:
| JP2007269589A | 2007-10-18 |
Other References:
JPN6010049100; Ｃ．ＡＮ ｅｔ ａｌ．: 'Ｔｈｅ ｓｙｎｔｈｅｓｉｓ ａｎｄ ｃｈａｒａｃｔｅｒｉｚａｔｉｏｎ ｏｆ ｎａｎｏｃｒｙｓｔａｌｌｉｎｅ Ｃｕ- ａｎｄ Ａｇ-ｂａｓｅｄ ｍｕｌｔｉｎａｒｙ ｓｕｌｆｉｄｅ ｓｅｍｉｃｏｎｄｕｃｔ' Ｍａｔｅｒｉａｌｓ Ｒｅｓｅａｒｃｈ Ｂｕｌｌｅｔｉｎ Ｖｏｌ．３８ Ｎｏ．５, 20030430, Ｐａｇｅｓ８２３-８３０
JPN6010049101; Ｚ．ＧＵＩ ｅｔ ａｌ．: 'Ａ ｎｅｗ ｃｏｌｌｏｉｄａｌ ｐｒｅｃｕｒｓｏｒ ｃｏｏｐｅｒａｔｉｖｅ ｃｏｎｖｅｒｓｉｏｎ ｒｏｕｔｅ ｔｏ ｎａｎｏｃｒｙｓｔａｌｌｉｎｅ ｑｕａｔｅｒｎａｒｙ ｃｏｐｐｅｒ ｓｕｌｆｉｄｅ' Ｍａｔｅｒｉａｌｓ Ｒｅｓｅａｒｃｈ Ｂｕｌｌｅｔｉｎ Ｖｏｌ．３９ Ｎｏ．２, 20040202, Ｐａｇｅｓ２３７-２４１
JPN6010049101; Ｚ．ＧＵＩ ｅｔ ａｌ．: 'Ａ ｎｅｗ ｃｏｌｌｏｉｄａｌ ｐｒｅｃｕｒｓｏｒ ｃｏｏｐｅｒａｔｉｖｅ ｃｏｎｖｅｒｓｉｏｎ ｒｏｕｔｅ ｔｏ ｎａｎｏｃｒｙｓｔａｌｌｉｎｅ ｑｕａｔｅｒｎａｒｙ ｃｏｐｐｅｒ ｓｕｌｆｉｄｅ' Ｍａｔｅｒｉａｌｓ Ｒｅｓｅａｒｃｈ Ｂｕｌｌｅｔｉｎ Ｖｏｌ．３９ Ｎｏ．２, 20040202, Ｐａｇｅｓ２３７-２４１
Attorney, Agent or Firm:
Masaharu Takamura