Title:
SEMICONDUCTOR RADIATION DETECTION ELEMENT
Document Type and Number:
Japanese Patent JPS5956773
Kind Code:
A
Abstract:
PURPOSE:To prevent the dispersion of detection characteristic by a method wherein a wafer is divided into a plurality of regions, a diffused layer of a small area is built in each region, and a depletion layer is made to expand from each diffused layer to the width direction and the radial direction of the wafer. CONSTITUTION:The one wherein the diffused layer of a small area has been built in each region by dividing the wafer into a plurality is mounted on a stem 12, and then marking is performed to an electrode 5b of a region of defect characteristic by measuring the characteristic of each region. Electrodes 5a of the regions of excellent characteristic are connected each other in parallel by a bonding wire 13 and connected to a lead pin 14. When a radiation is detected by using this radiation element, a reverse bias voltage is impressed between electrodes 5 (5a, 5b) and 6, and then the depletion layer A is made to expand from the diffused layer 4 to the width direction P and the radial direction Q of the wafer 1. The extension of the depletion layer B to a region of defect characteristic is prevented by providing recesses 8 between each region.
Inventors:
SATOU NORITADA
Application Number:
JP16682782A
Publication Date:
April 02, 1984
Filing Date:
September 25, 1982
Export Citation:
Assignee:
FUJI DENKI SOGO KENKYUSHO KK
International Classes:
G01T1/24; H01L31/09; H01L31/115; (IPC1-7): G01T1/24; H01L31/00
Attorney, Agent or Firm:
Iwao Yamaguchi