Title:
半導体センサー・デバイスおよびその製造方法
Document Type and Number:
Japanese Patent JP6393930
Kind Code:
B2
Abstract:
[Problem] To reduce the size and increase the pressure detection sensitivity of a semiconductor pressure sensor. [Solution] At least two deep indentations or through holes are formed adjacent in the thickness direction of a semiconductor substrate, conductor substrate, or the like. By means of a pressure difference of the two adjacent indentations or through holes, a dividing wall (substrate-side wall) (corresponding to a diaphragm) of the two adjacent indentations or through holes bows, changing the volume of an airtight space or groove and changing the capacitance of the substrate-side wall itself or between electrodes formed thereupon. Pressure detection is performed on the basis of the amount of change. The deeper the groove or the like, the thinner the substrate-side wall, and the smaller the distance between substrate-side walls, the more favorable detection sensitivity becomes, and so it is possible to produce an extremely minute pressure sensor or the like.
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Inventors:
Shun Hosaka
Application Number:
JP2012016017A
Publication Date:
September 26, 2018
Filing Date:
January 30, 2012
Export Citation:
Assignee:
Shun Hosaka
International Classes:
G01L9/00; B41J2/045; H01L29/84; H01L41/08; H01L41/09; H01L41/18; H01L41/187; H01L41/193; H01L41/22; H04R19/04; H04R31/00
Domestic Patent References:
| JP2011220885A | ||||
| JP63175737A | ||||
| JP11220137A | ||||
| JP64013158U |