Title:
SEMICONDUCTOR SENSOR
Document Type and Number:
Japanese Patent JP3534176
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor sensor for reducing drift due to a temperature or the lapse of a time.
SOLUTION: This semiconductor sensor is provided with a supporting substrate 5 constituted of a pyrex joined to a substrate constituted of an n type semiconductor by anode junction, a sensor element 1 formed at the supporting substrate side of the substrate, and leads 8 formed on the substrate and constituted of a plurality of p type semiconductors whose one edges are connected with the sensor. This semiconductor sensor is provided with a polycrystalline semiconductor gate layer 21 formed at the junction of the substrate and the supporting substrate 5 so that any leak currents can be prevented from running between the leads 8 due to a negative load existing in the pyrex based on the anode junction, and constituted of a low resistance semiconductor with a higher potential than that of the substrate.
Inventors:
Watanabe, Tetsuya
Kato, Akiyuki
Kato, Chikako
Kato, Akiyuki
Kato, Chikako
Application Number:
JP2711299A
Publication Date:
June 07, 2004
Filing Date:
February 04, 1999
Export Citation:
Assignee:
YOKOGAWA ELECTRIC CORP
International Classes:
G01P15/12; B62D57/00; B81C3/00; G01L9/00; G01L9/04; H01L29/84; (IPC1-7): H01L29/84; G01L9/04; G01P15/12