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Title:
SEMICONDUCTOR SHORT PULSE GENERATING DEVICE, TERAHERTZ-WAVE GENERATING DEVICE, CAMERA, IMAGING DEVICE, AND MEASURING DEVICE
Document Type and Number:
Japanese Patent JP2013104804
Kind Code:
A
Abstract:

To provide a semiconductor short pulse generating device, a terahertz-wave generating device, a camera, an imaging device, and a measuring device which have high utilization efficiency of light and do not require a complicated manufacturing process.

The a semiconductor short pulse generating device comprises: an optical pulse generating section 2 for generating an optical pulse; a first pulse compression section 3 for compressing the optical pulse which has been generated in the optical pulse generating section 2 based on saturable absorption; a second pulse compression section 5 for compressing the optical pulse which has been compressed in the first pulse compression section 3 based on group velocity dispersion compensation; and an amplification section 4 which is provided on the front stage of the first pulse compression section 3 or between the first pulse compression section 3 and the second pulse compression section 5, and amplifies the optical pulse. The optical pulse generating section 2 is a super luminescent diode.


Inventors:
NAKAYAMA HITOSHI
Application Number:
JP2011249420A
Publication Date:
May 30, 2013
Filing Date:
November 15, 2011
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
G02F1/017; G01N21/35; G01N21/3581; G02F1/025
Domestic Patent References:
JPH09186387A1997-07-15
JPH08320254A1996-12-03
JP2011117789A2011-06-16
JP2006024803A2006-01-26
JPH11218628A1999-08-10
JP3328881B22002-09-30
JPH04199133A1992-07-20
JPH02221902A1990-09-04
JPH0436268U1992-03-26
JP2008145289A2008-06-26
Attorney, Agent or Firm:
Masahiko Ueyanagi
Osamu Suzawa
Kazuhiko Miyasaka