Title:
SEMICONDUCTOR STORAGE CIRCUIT
Document Type and Number:
Japanese Patent JP3165942
Kind Code:
B2
Abstract:
PURPOSE: To obtain a semiconductor storage circuit such as EPROM which realizes high speed information reading and reduction of power consumption.
CONSTITUTION: A memory section is divided into two sections (1A, 1B), a word line selecting section 20 is arranged at the center thereof, the memory sections 1A, 1B are selected by the common word line selecting section 20 and when any one of them is selected, the other is not selected. The non-selected memory section 1A (1B) is used as a dummy read system, a timing signal for completing the read operation of the selected memory section 1B (1A) is obtained on the basis of the level change of an output signal of the sense amplifier and an output signal of the sense amplifier is transmitted to a data bus DB with this timing signal.
Inventors:
Masami Usami
Application Number:
JP1404994A
Publication Date:
May 14, 2001
Filing Date:
January 11, 1994
Export Citation:
Assignee:
Motorola, Inc.
International Classes:
G11C17/00; G11C16/02; G11C16/06; (IPC1-7): G11C16/06
Domestic Patent References:
| JP278099A |
Attorney, Agent or Firm:
Toshio Inoue