Title:
SEMICONDUCTOR STORAGE DEVICE AND DELAY TIME CONTROL METHOD
Document Type and Number:
Japanese Patent JP2011124838
Kind Code:
A
Abstract:
To perform delay time control at high speed, and to improve performance.
A temperature sensor S1 detects a temperature to be outputted as temperature information. A TAP holding circuit S2 locks a DLL circuit S4 within a use temperature range at a preliminarily used frequency and a voltage state, and holds the lock state of the DLL circuit S4 as initial delay time information by being associated with an occasional temperature detected by the temperature sensor S1, When actually used, the DLL circuit S4 reads the initial delay time information to the temperature generated by the temperature sensor S1 when delay time control is started from the TAP holding circuit S2, and starts the delay time on the basis of its lock information.
Inventors:
ARAI SANENARI
Application Number:
JP2009281450A
Publication Date:
June 23, 2011
Filing Date:
December 11, 2009
Export Citation:
Assignee:
ELPIDA MEMORY INC
International Classes:
H03L7/081; G11C11/407; G11C11/4076; H03K5/135; H03L1/02
Attorney, Agent or Firm:
Sumio Tanai
Tadashi Takahashi
Naoki Ofusa
Kazunori Onami
Tadashi Takahashi
Naoki Ofusa
Kazunori Onami
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