Title:
SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3153802
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce the occurrence of short-circuiting between conductive layers, improve the electrical connection of the connection hole between a semiconductor substrate and the conductive layers, and further reduce a manufacturing process by forming a gate electrode in the semiconductor substrate.
SOLUTION: In a semiconductor storage, a gate electrode 127 is provided at the formation region of a second opening 124 out of a first opening 111 on a semiconductor substrate 110, a first impurity diffusion layer 109, a second impurity diffusion layer 115, a third impurity diffusion layer 160, a bit line 131, a charge accumulation electrode 137, a capacity insulation film 138, and a plate electrode 139 are provided as unit memory cells 140 and 141, and a region where no second opening 124 is formed is set to separation regions 142 and 143 between memory cells, thus preventing the gate electrode 127 and other conductive layers from being short-circuited easily, enabling connection holes 130 and 134 to be shallow, and improving the electrical connection in the connection holes.
Inventors:
Hibi, Noritaka
Application Number:
JP34066898A
Publication Date:
April 09, 2001
Filing Date:
November 30, 1998
Export Citation:
Assignee:
MATSUSHITA ELECTRON CORP
International Classes:
H01L27/108; H01L21/8242; H01L21/8246; H01L27/105; (IPC1-7): H01L27/108; H01L21/8242
Attorney, Agent or Firm:
池内 寛幸 （外１名）