Title:
SEMICONDUCTOR STORAGE DEVICE AND PHOTOELECTRIC CONVERSION DEVICE
Document Type and Number:
Japanese Patent JP2022108622
Kind Code:
A
Abstract:
To provide a technique that is useful for suppressing malfunction of a semiconductor storage device.SOLUTION: A semiconductor storage device includes a plurality of memory cells capable of reading and writing data, a plurality word lines, and a plurality of bit lines. The plurality of memory cells includes memory cells included in a first memory cell group in which the data is read and written in positive logic and memory cells included in a second memory cell group in which the data is read and written in negative logic. The memory cells connected to the same bit line among the plurality of bit lines include the memory cells of the first memory cell group and the memory cells in the second memory cell group.SELECTED DRAWING: Figure 6
Inventors:
KATO TATSUNORI
KAKINUMA NOBUAKI
KAKINUMA NOBUAKI
Application Number:
JP2021003725A
Publication Date:
July 26, 2022
Filing Date:
January 13, 2021
Export Citation:
Assignee:
CANON KK
International Classes:
G11C11/418; G11C8/12; G11C16/10
Attorney, Agent or Firm:
Patent Business Corporation Otsuka International Patent Office