Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2004164760
Kind Code:
A
Abstract:
To shorten a development period of a semiconductor storage device such as a flash memory or the like by enabling adjusting threshold voltage of a memory cell without correcting a circuit and layout.
This device has a write-in voltage generating circuit 20 determining threshold voltage of a memory cell, a command input terminal 22 inputting a command corresponding to the threshold voltage, and a decoder 19 decoding the command and deciding the write-in voltage of the generating circuit. Thereby, threshold voltage of a memory cell can be adjusted by the command.
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Inventors:
KAMIYA KIYOSHI
UEDA TERUO
SUGANO HIROYUKI
FURUNO TAKESHI
UEDA TERUO
SUGANO HIROYUKI
FURUNO TAKESHI
Application Number:
JP2002330443A
Publication Date:
June 10, 2004
Filing Date:
November 14, 2002
Export Citation:
Assignee:
RENESAS TECH CORP
International Classes:
G11C16/02; (IPC1-7): G11C16/02
Attorney, Agent or Firm:
Yamato Tsutsui