Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2020155664
Kind Code:
A
Abstract:
To provide a semiconductor storage device capable of improving operation performance.SOLUTION: A semiconductor storage device of an embodiment comprises a first block and a second block including a plurality of memory cell transistors and arranged adjacent to each other in a Y direction. Each of the first block and the second block comprises a plurality of conductive layers 20 extending in an X direction crossing a Y direction and arranged in the Y direction, a plurality of memory trenches MST provided between the conductive layers 20 and extending in a Z direction crossing the Y direction and an X2 direction, a plurality of memory pillars MP provided so as to stride over two conductive layers 20 sandwiching the memory trench MST, extending in the Z direction, and arranged in the X direction, and a transistor provided between the memory pillar MP and the conductive layer 20. In the Y direction, the conductive layer 20-15 provided at one end of the first block is electrically connected to the conductive layer 20-d provided at the other end of the first block.SELECTED DRAWING: Figure 18
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Inventors:
NAKATSUKA KEISUKE
ARAI FUMITAKA
ARAI FUMITAKA
Application Number:
JP2019054118A
Publication Date:
September 24, 2020
Filing Date:
March 22, 2019
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L27/11582; H01L21/336; H01L27/11548; H01L27/11556; H01L27/11575; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Kurata Masatoshi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Sanae Kaneko
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Sanae Kaneko