Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2021118200
Kind Code:
A
Abstract:
To provide a semiconductor storage device with suitable ON/OFF characteristics.SOLUTION: A semiconductor storage device comprises a substrate, a plurality of first conductive layers arranged in a first direction, and a first semiconductor layer facing the plurality of first conductive layers in a second direction and containing an additive. The first semiconductor layer contains crystal grains having a size greater than or equal to 100 nm. When a concentration of the additive in the first semiconductor layer is measured along a virtual straight line extending in the second direction with conditions that a point at which the concentration of the additive becomes the maximum value is a first point, a point at which the concentration becomes the minimum value in a region closer to the first conductive layer than this is a second point, and a point at which the concentration becomes the minimum value in a region further from the first conductive layer than this is a third point, a distance from the second point to an end point on the first conductive layer side of the first semiconductor layer is smaller than a distance to an end point on the opposite side, and a distance from the third point to the end point on the first conductive layer side of the first semiconductor layer is greater than a distance to the end point on the opposite side.SELECTED DRAWING: Figure 6
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Inventors:
GOTO MASAKAZU
Application Number:
JP2020008477A
Publication Date:
August 10, 2021
Filing Date:
January 22, 2020
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L27/11582; H01L21/336; H01L27/11556; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Kisaragi International Patent Business Corporation