Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP3389124
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of improving characteristics without increasing a chip size.
SOLUTION: This semiconductor storage device has a writing operation auxiliary circuit 2 which is arranged between a memory cell region 50 and a peripheral circuit region and has a cell shape. The circuit 2 has a first circuit 4, which conducts a discharge operation of digit lines during the start of a writing and a precharge operation of the digit lines during the completion of a writing, and a second circuit 5 which conducts a discharge operation of digit lines and conducts the switching of discharging operation of the digit lines.
More Like This:
JP3089726 | [Title of Invention] Memory circuit |
JPS63208241 | SEMICONDUCTOR DEVICE WIRING SYSTEM |
JP2009076169 | SEMICONDUCTOR MEMORY |
Inventors:
Hiroki Kawabata
Yoshinori Ueno
Yoshinori Ueno
Application Number:
JP34086998A
Publication Date:
March 24, 2003
Filing Date:
December 01, 1998
Export Citation:
Assignee:
NC Microsystem Co., Ltd.
International Classes:
G11C11/41; G11C11/417; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): G11C11/41; G11C11/417
Domestic Patent References:
JP7262784A | ||||
JP329194A | ||||
JP5274886A | ||||
JP10125805A | ||||
JP7147091A |
Attorney, Agent or Firm:
Akihiko Nakazawa