PURPOSE: To highly integrate a semiconductor memory by individually forming lower electrodes on MOSFETs of memory cells, and integrally forming a thin ferrodielectric film as a capacitor insulating film over a plurality of cells on the layer without isolating the thin film.

CONSTITUTION: A MOSFET is formed of a gate insulating film 4 made of a polycrystalline silicon film through a silicon oxide film on the surface of a P-type silicon substrate 1, and source, drain regions 5, 6 made of N-type impurity regions. A capacitor is formed of a lower electrode 19 connected on the region 5 through a contact hole h1, a ferrodielectric thin film 8 of bismuth titanate, and the upper electrode 9 of tungsten, and a gate electrode 4 is arrayed continuously in one direction of a memory array to form a word line. Accordingly, an interval between cells can be designed in the minimum patterning line width of the lower electrode, its integration is remarkably improved, and the film 8 is not formed directly above the gate electrode. Therefore, the characteristics of a transistor are not deteriorated by the deformation of a channel forming region due to an electrostrictive effect, a pyroelectric effect, etc.