SEMICONDUCTOR STORAGE DEVICE

Title:

SEMICONDUCTOR STORAGE DEVICE

Document Type and Number:

Japanese Patent JPH0685187

Kind Code:

A

Abstract:

PURPOSE: To facilitate the working of an aluminum based wiring, and enable applying a high permitivity film to a capacitance insulating film, when a capacitance storage electrode is thickened in a DRAM of stacked capacitor structure.

CONSTITUTION: In a semiconductor storage device having a stacked capacitor, it is formed above a bit line 7 and an aluminum based wiring 9, via an interlayer insulating film 10. A capacitance storage electrode 11 can be thickened without being limited by the focus margin of stepper and photoresist. Metal oxide like tantalum oxide (Ta2O5) which can not endure high temperature and has high permitivity can be applied to a capacitance insulating film 12. Hence, when the occupied area of a memory cell is reduced, an electrostatic capacity sufficient to accurately read data of a memory cell can be obtained.

Inventors:

TANIGAWA TAKAO

Application Number:

JP23794592A

Publication Date:

March 25, 1994

Filing Date:

September 07, 1992

Export Citation:

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Assignee:

NEC CORP

International Classes:

H01L27/04; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L27/108; H01L27/04

Attorney, Agent or Firm:

Naoki Kyomoto (2 outside)

Next Patent: MANUFACTURE OF SEMICONDUCTOR STORAGE DEVICE