Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JPH1186552
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor storage device provided with an access- path circuit reducing an invalid data area existing between output data and securing a valid data width (enlarging window width). SOLUTION: In this semiconductor storage device, an internal constant voltage VBOOT is applied to the access-path circuit as a constant voltage source by converting a source voltage VCC applied from the outside through a voltage conversion circuit 5 when the data in a memory cell array 1 are outputted for preventing an effect of voltage dependence in the access-path circuit (first stage circuit 2, one shot pulse generation circuit 3, D-latch circuit 4) continuously inputting/outputting the data synchronized with a clock signal CLK based on a reference voltage Vref inputted from the outside, and the data is outputted from the memory cell array 1 according to this internal constant voltage VBOOT. Thus, the invalid data area existing between the output data in a D-latch circuit 4 is reduced.
Inventors:
TAKEUCHI TAKASHI
Application Number:
JP23991997A
Publication Date:
March 30, 1999
Filing Date:
September 04, 1997
Export Citation:
Assignee:
NEC CORP
International Classes:
G11C11/409; G11C11/407; (IPC1-7): G11C11/409; G11C11/407
Attorney, Agent or Firm:
Yosuke Goto (1 person outside)