Title:
窒化ガリウムベース半導体の半導体構造
Document Type and Number:
Japanese Patent JP4095066
Kind Code:
B2
Abstract:
A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.
Inventors:
Guo shipping
Gotthold David
Popristic Milan
Piers Boris
Area Shevich Ivan
Shelton brian es
Seludge Alex Dee
Murphy michael
Stall Richard A
Gotthold David
Popristic Milan
Piers Boris
Area Shevich Ivan
Shelton brian es
Seludge Alex Dee
Murphy michael
Stall Richard A
Application Number:
JP2004557590A
Publication Date:
June 04, 2008
Filing Date:
December 02, 2003
Export Citation:
Assignee:
Mcore Corporation
International Classes:
H01L21/205; C30B29/68; H01L21/20; H01L29/15; H01L29/20; H01L33/00
Domestic Patent References:
| JP2002170776A | ||||
| JP2001274096A | ||||
| JP10107317A |
Foreign References:
| US6391748 |
Attorney, Agent or Firm:
Sadao Kumakura
Fumiaki Otsuka
Toshio Imajo
Takaki Nishijima
Fumiaki Otsuka
Toshio Imajo
Takaki Nishijima