Title:
SEMICONDUCTOR SUBSTRATE CLEANING PROCESS
Document Type and Number:
Japanese Patent JPS61272935
Kind Code:
A
Abstract:
PURPOSE:To reduce the capacity of heater by cutting down the quantity of pure water to be supplied by a method wherein pure water is overflowed from a processing vessel to an overflow vessel and a drain port to resupply the residual pure water while being refiltered. CONSTITUTION:When the temperature of pure water attains to the specified value, a circulating pump (valve) 6 is driven again to overflow the pure water from a processing vessel 8 to an overflow vessel 3 and after the water level in the overflow vessel 3 attains to the level of an overflow vessel drain port 15, a very small quantity of pure water to be supplied for the overflow vessel 3 is drained from the overflow vessel drain port 15 while circulating and filtering the pure water in the vessel by the circulating pump 6 and a filter 7 and then with said very small quantity of pure water ready to be newly heated by a heater 11, a semiconductor substrate can be immersed in the processing vessel 8 to be cleaned up.
Inventors:
SEO YUJI
Application Number:
JP11492285A
Publication Date:
December 03, 1986
Filing Date:
May 28, 1985
Export Citation:
Assignee:
NEC CORP
International Classes:
B08B3/04; H01L21/304; (IPC1-7): B08B3/04
Attorney, Agent or Firm:
Sugano Naka