Title:
SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2005109186
Kind Code:
A
Abstract:
To realize a high quality strain-silicon substrate which prevents a defective crystal caused by dislocation of a silicon-germanium layer, by preventing an occurrence of the dislocation by an epitaxial growth of the silicon-germanium layer on the strain silicon substrate, and to provide a semiconductor device which uses the strain silicon substrate.
A silicon layer (a strain Si layer 5)is epitaxially grown on the silicon-germanium (SiGe) substrate 1, comprising a single crystal silicon-germanium mixed crystal with the ratio of silicon to germanium being controlled approximately uniformly.
Inventors:
TAKAHASHI HIROSHI
Application Number:
JP2003341301A
Publication Date:
April 21, 2005
Filing Date:
September 30, 2003
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/762; H01L21/02; H01L21/20; H01L21/205; H01L21/336; H01L21/76; H01L21/8238; H01L21/8242; H01L27/08; H01L27/092; H01L27/108; H01L27/12; H01L29/78; H01L29/786; (IPC1-7): H01L21/20; H01L21/205; H01L21/336; H01L21/76; H01L21/762; H01L21/8238; H01L21/8242; H01L27/08; H01L27/092; H01L27/108; H01L27/12; H01L29/78; H01L29/786
Attorney, Agent or Firm:
Yoshitsuno Kakuda
Hironobu Isoyama
Hironobu Isoyama