Title:
SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURING NETHO
Document Type and Number:
Japanese Patent JP3923620
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an SOI(silicon on insulator) semiconductor substrate in which a selectively formed insulating film and N- and P-type impurity layers are formed on one substrate.
SOLUTION: After impurity layers 30 and 60 of first and second conductivities are formed on a first substrate 10, a first insulating film 50 is formed on the substrate 10 by thermal oxidation and a trench structure 100 which separates the impurity layers 30 and 60 from each other is formed to a a prescribed depth. Then, a non-doped second substrate 70 is mounted on the substrate 10 and Si layers which constitute first and second active areas having impurity layers of different conductivities are formed by shaving the substrate 10 to the trench structure 100. Therefore, the active areas having impurity layers of different conductivities can be designed on both sides of the trench structure exposed on the same substrate, and the problem of alignment can be solved even for processes which are performed continuously at the time of manufacturing an element by exposing the trench structure. In addition, active areas having a uniform thickness can be formed on the entire surface of a substrate.
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Inventors:
All Chang
Application Number:
JP28370597A
Publication Date:
June 06, 2007
Filing Date:
October 16, 1997
Export Citation:
Assignee:
Fairchild Korea Semiconductor Co., Ltd.
International Classes:
H01L21/02; H01L21/762; H01L21/20; H01L21/304; H01L21/76; H01L21/763; H01L21/84; H01L27/12; (IPC1-7): H01L21/02; H01L21/762; H01L27/12
Domestic Patent References:
| JP5259266A | ||||
| JP11502674A | ||||
| JP4206949A | ||||
| JP2219266A | ||||
| JP3095912A |
Attorney, Agent or Firm:
Hidekazu Miyoshi