Title:
SEMICONDUCTOR SUBSTRATE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3967045
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent leak current or poor breakdown-strength caused by bad crystallinity which takes place in a defective crystal region by comprising an insulating film for filling a recessed defect contained in a semiconductor wafer as well as a semiconductor device formed on the surface of semiconductor wafer.
SOLUTION: By a CVD method, a silicon oxide film 23, for example, is grown to the thickness equal to, or larger than, the radius of a micro pipe 22. Here, the micro pipe 22 (hole part) is filled with the silicon oxide film 23 (b). Then the silicon oxide film 23 is etched and removed from the surface side of a substrate 21, with the etching stopped when reaching the substrate 21. Thus, only the micro pipe 22 is filled with the silicon oxide film 24 (c). Ion-implanting is performed with p-type impurity before thermal-treatment annealing to form a p-type layer 25 (d). Lastly an electrode 26 is formed to provide a semiconductor element where a large joint diode is formed (d).
Inventors:
Yoshiaki Sano
Application Number:
JP25280299A
Publication Date:
August 29, 2007
Filing Date:
September 07, 1999
Export Citation:
Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
H01L21/302; H01L29/861; H01L21/20; H01L21/329; (IPC1-7): H01L21/20; H01L21/3065; H01L21/329; H01L29/861
Domestic Patent References:
| JP927489A |
Attorney, Agent or Firm:
Mamoru Shimizu
Makoto Kawai
Makoto Kawai
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