Title:
SEMICONDUCTOR SWITCHING CIRCUIT
Document Type and Number:
Japanese Patent JP2002208848
Kind Code:
A
Abstract:
To realize improvement in the on/off ratio and improvement in high- input resistance characteristic without accompanied increase in a circuit scale.
The source of a first FET 11 is connected to an input terminal IN to which a high frequency signal is inputted, the source of a second FET 12 is connected to the drain of the first FET 11, and an output terminal OUT is connected to the drain of the second FET 12. An inductance 13 is connected mutually between the gate of the first FET 11 and the gate of the FET 12. The inductance 13 forms a parallel resonance circuit, together with the parasitic capacitance of the first and second FETs 11 and 12.
Inventors:
MOTOIKE KOICHI
Application Number:
JP2001002852A
Publication Date:
July 26, 2002
Filing Date:
January 10, 2001
Export Citation:
Assignee:
TOSHIBA MICRO ELECTRONICS
TOSHIBA CORP
TOSHIBA CORP
International Classes:
H03K17/06; H03K17/687; (IPC1-7): H03K17/06; H03K17/687
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)