To provide a semiconductor-type mechanical quantity detecting element which can be miniaturized and can suppress the increase in man-day, by reducing the warpage of its movable part due to internal stress accompanying lattice strain residing inside, and to provide a method for manufacturing the mechanical quantity detecting element.

By performing, by plasma etching, shallow digging processing of the surface of at least the region corresponding to the movable part 133a of an active layer 13 where the movable part 133a is formed, a shallow-digging processed part 134 is formed and lattice strain is introduced into the vicinity of its surface (strain introduction part 135), and by internal stress accompanying this lattice strain, an influence by the internal stress accompanying the lattice strain having existed in a strain residing part 131 before the processing is canceled.