Title:
SEMICONDUCTOR WAFER CLEANING COMPOSITION USING WATER AMMONIUM FLUORIDE AND AMINE
Document Type and Number:
Japanese Patent JP2008066747
Kind Code:
A
Abstract:
To provide a chemical formulation which enables the effective removal of a residue following a resist ashing process, wherein there is no possibility of attacking and breaking a brittle structure to be left on a wafer.
The chemical formulation comprises the following components based on the following range of percentage by weight: 1-21% of ammonium fluoride and/or its derivatives; 20-55% of organic amines or mixture of 2 kinds of amines; 23-50% of water; and 0-21% of metal chelating agent or mixture of chelating agents.
Inventors:
WOJTCZAK WILLIAM A
GUAN GEORGE
FINE DANIEL N
FINE STEPHEN A
GUAN GEORGE
FINE DANIEL N
FINE STEPHEN A
Application Number:
JP2007291278A
Publication Date:
March 21, 2008
Filing Date:
November 08, 2007
Export Citation:
Assignee:
ADVANCED TECH MATERIALS
International Classes:
C11D3/04; H01L21/304; C09K13/00; C11D3/20; C11D3/30; C11D3/32; C11D7/10; C11D7/26; C11D7/32; C11D7/34; C11D11/00; C11D17/08; G03F7/42; H01L21/302; H01L21/306; H01L21/3065; H01L21/308
Domestic Patent References:
| JPH07297158A | 1995-11-10 | |||
| JPH08306651A | 1996-11-22 |
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Natsuki Morishita
Takaaki Yasumura
Natsuki Morishita
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