Title:
SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP3141430
Kind Code:
B2
Abstract:
PURPOSE: To ensure short wavelength emission by growing a cladding layer and an active layer by epitaxy on an InP substrate and forming the cladding layer of a II-VI compound semiconductor containing Mg.
CONSTITUTION: Cladding layers 2, 3 and an active layer 4 are epitaxially grown on an InP substrate 1. The cladding layers 2, 3 are formed by epitaxy of a II-VI compound semiconductor containing Mg. The cladding layers 2, 3 are formed in particular of a II-VI compound semiconductor layer comprising a group IIa-VI and group IIb-VI mixed crystal of MgxZnyCd1-x-ySe (x,y: atomic ration). In this composition, x, y satisfy: 0<x≤0.95, 0.50≥y≥0.05. A band gap of the active layer 4 is set to be smaller than those of the cladding layers 2, 3, with difference therebetween being 0.2eV or greater, preferably 0.3eV or greater. Hereby, short wavelength emission is ensured.
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Inventors:
Hiroyuki Okuyama
Katsuhiro Akimoto
Katsuhiro Akimoto
Application Number:
JP17412191A
Publication Date:
March 05, 2001
Filing Date:
July 15, 1991
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01S5/00; H01S5/32; H01S5/327; (IPC1-7): H01S5/327
Domestic Patent References:
| JP1157576A | ||||
| JP521893A | ||||
| JP575217A |
Attorney, Agent or Firm:
Hidemori Matsukuma