Title:
SHORT-CIRCUIT DETECTION CIRCUIT FOR PROM
Document Type and Number:
Japanese Patent JPS60136100
Kind Code:
A
Abstract:
Test circuitry is included in a PROM memory for detecting shorts between bit lines and word lines and shorts or leaks in a memory cell. The circuitry enables a selected positive voltage to be applied across all memory cells in the memory so that the existence of leaky memory cells or shorts in the memory can be detected during testing. The test circuitry has no appreciable effect on the memory during normal operation of the memory.
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Inventors:
ARUBAATO CHIYAN
MAAKU FUITSUTSU PATORITSUKU
DON GODAADO
ROBAATO JIEI BOSUNIYAKU
SHIRASU TSUYUUI
MAAKU FUITSUTSU PATORITSUKU
DON GODAADO
ROBAATO JIEI BOSUNIYAKU
SHIRASU TSUYUUI
Application Number:
JP14158184A
Publication Date:
July 19, 1985
Filing Date:
July 10, 1984
Export Citation:
Assignee:
MONORISHITSUKU MEMORY ZU INC
International Classes:
G11C17/08; G11C29/00; G11C29/02; G11C29/04; G11C29/50; (IPC1-7): G11C17/00; G11C29/00
Attorney, Agent or Firm:
Akihide Sugimura
Previous Patent: JPS60136099
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