Title:
SiC fluorescence material, a manufacturing method for the same, and a light emitting element
Document Type and Number:
Japanese Patent JP6231005
Kind Code:
B2
Abstract:
Provided are a SiC fluorescent material with improved luminous efficiency, a method for manufacturing the same and a light emitting element. A SiC fluorescent material comprises a SiC crystal in which a carbon atom is disposed in a cubic site and a hexagonal site, and a donor impurity and an acceptor impurity added therein, wherein a ratio of a donor impurity to be substituted with a carbon atom in a cubic site to a donor impurity to be substituted with a carbon atom in a hexagonal site is larger than a ratio of the cubic site to the hexagonal site in a crystal structure.
Inventors:
Tomohiko Maeda
Fumiharu Teramae
Nabae Koichi
Fumiharu Teramae
Nabae Koichi
Application Number:
JP2014534215A
Publication Date:
November 15, 2017
Filing Date:
May 29, 2013
Export Citation:
Assignee:
Lseed Co., Ltd.
International Classes:
C09K11/59; C09K11/02; C09K11/65; H01L33/08; H01L33/32
Domestic Patent References:
| JP2008277447A | ||||
| JP2012246380A |
Foreign References:
| WO2007058153A1 | ||||
| WO2005090515A1 | ||||
| WO2010114061A1 |
Attorney, Agent or Firm:
Tatsushi Shigeizumi