Title:
ＳｉＣウェハの製造方法
Document Type and Number:
Japanese Patent JP7228348
Kind Code:
B2
Abstract:
To provide a manufacturing method of a high-quality SiC wafer.SOLUTION: A manufacturing method of a SiC wafer includes a flattening step S14 for flattening a SiC wafer 20, an etching step S21 for etching the SiC wafer 20 by heating it under a Si vapor pressure, after the flattening step S14, and a chemical mechanical polishing step S31 for performing chemical mechanical polishing to a surface of the SiC wafer 20, after the etching step S21. By manufacturing the SiC wafer 20 through such steps, the high-quality SiC wafer 20 can be manufactured.SELECTED DRAWING: Figure 1
Inventors:
Masaya Nagaya
Takahiro Kanda
Takeshi Okamoto
Satoshi Torimi
Nogami Akatsuki
Kitahata Makoto
Takahiro Kanda
Takeshi Okamoto
Satoshi Torimi
Nogami Akatsuki
Kitahata Makoto
Application Number:
JP2018139497A
Publication Date:
February 24, 2023
Filing Date:
July 25, 2018
Export Citation:
Assignee:
株式会社デンソー
International Classes:
C30B29/36; C30B33/00; C30B33/12; H01L21/302; H01L21/304
Domestic Patent References:
| JP2004168649A | ||||
| JP2017105697A | ||||
| JP2008303097A |
Foreign References:
| WO2017188382A1 |
Attorney, Agent or Firm:
Tomoko Tsujita
Daisuke Muramatsu
Daisuke Muramatsu
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