SIC CRYSTAL MANUFACTURING DEVICE, CONTROLLER FOR SIC CRYSTAL MANUFACTURING DEVICE, AND METHOD FOR GENERATING LEARNING MODEL FOR SIC CRYSTAL MANUFACTURING DEVICE, AND METHOD FOR CONTROLLING SIC CRYSTAL MANUFACTURING DEVICE

Title:

Document Type and Number:

Japanese Patent JP2023024330

Kind Code:

A

Abstract:

To provide an excellent technology related to SiC crystal manufacturing than conventional technologies.SOLUTION: A controller for a SiC crystal manufacturing device has a learning model which outputs, based on a measured value of a first sensor included in the SiC crystal manufacturing device, an estimated value of a second physical amount that cannot be observed upon manufacture of SiC crystals. The controller controls an actuator in a manner such as to decrease a difference between the estimated value outputted by the learning model upon the manufacture of the SiC crystal and a target value of the second physical amount. The controller uses results of a simulation model based on structure data of the SiC crystal manufacturing device as teacher data to cerate a basic learning model. The controller acquires measured values of the first sensor and the second sensor when the actuator is driven under condition in which any SiC crystal cannot be manufactured with the SiC crystal manufacturing device fitted with a second sensor which measures the second physical amount but the second physical amount can be observed, and creates a learning model for correcting output of the basic leaning model by use of the measured values.SELECTED DRAWING: Figure 7

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Inventors:

UEMATSU DAISUKE

Application Number:

JP2022119887A

Publication Date:

February 16, 2023

Filing Date:

July 27, 2022

Export Citation:

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Assignee:

DENSO CORP
TOYOTA MOTOR CORP
MIRISE TECH CORP

International Classes:

G05B13/04; C30B25/16; C30B29/36

Attorney, Agent or Firm:

Patent Attorney Corporation Kaiyu International Patent Office

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