SILICA BASED INSULATING MATERIAL AND MANUFACTURE OF INSULATING FILM

Title:

SILICA BASED INSULATING MATERIAL AND MANUFACTURE OF INSULATING FILM

Document Type and Number:

Japanese Patent JPH08241890

Kind Code:

A

Abstract:

PURPOSE: To form an insulating layer having excellent flattening capacity without crack by using polyhydrogen siloxane synthesized from hydrogen silane having acetoxy group as the material of an interlayer insulating film.

CONSTITUTION: Hydrolysis and polycondensation are conducted at silane compound having 1 to 3 hydrogen groups and 1 to 3 acetoxy groups for one silicon atom, polyhydrogen siloxane represented by a formula is synthesized, which is diluted by solvent to solution. A semiconductor substrate is coated with the solution to form a coating film, then thermally decomposed in an oxidizing atmosphere to form a silica insulating film. Thus, the Si-H bond of the siloxane is replaced with the Si-O bond, and an expansion stress is generated, and hence no crack occurs.

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Inventors:

NAKADA YOSHIHIRO
FUKUYAMA SHUNICHI
KOBAYASHI TOMOKO

Application Number:

JP4408395A

Publication Date:

September 17, 1996

Filing Date:

March 03, 1995

Export Citation:

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Assignee:

FUJITSU LTD

International Classes:

H01L21/768; C08G77/12; H01L21/312; (IPC1-7): H01L21/312; H01L21/768

Attorney, Agent or Firm:

Teiichi

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