Title:
炭化珪素半導体装置、電力変換装置、および炭化珪素半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7068916
Kind Code:
B2
Abstract:
A drift layer has a first conductivity type and is provided on a silicon carbide substrate. A well region has a second conductivity type and is provided on the drift layer. A source region has the first conductivity type and is provided on the well region. A gate trench has an inner surface with a bottom located at a deeper position than the well region and a lateral part continuous with the bottom. An electric field relaxation region has the second conductivity type and has at least a part located below the bottom of the gate trench. A surge relaxation region has the first conductivity type, contacts at least a part of the bottom of the gate trench, and is separated from the drift layer by the electric field relaxation region.
Inventors:
Yuji Ebiike
Yasuhiro Kagawa
Yasuhiro Kagawa
Application Number:
JP2018090470A
Publication Date:
May 17, 2022
Filing Date:
May 09, 2018
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L29/78; H01L21/265; H01L21/336; H01L29/12; H01L29/739; H02M7/48
Domestic Patent References:
| JP2014135494A | ||||
| JP2017139441A | ||||
| JP2018503268A | ||||
| JP2010245256A |
Foreign References:
| US20170338302 | ||||
| US5471075 | ||||
| WO2017175460A1 | ||||
| WO2016157606A1 | ||||
| WO2014080471A1 |
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita
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