炭化珪素単結晶インゴットの製造装置及び製造方法

Japanese Patent JP6861555

B2

To provide a method for manufacturing a silicon carbide single crystal ingot suitable for manufacturing, with good reproducibility, the silicon carbide ingot, or especially not limited to, a silicon carbide single crystal ingot which has a large diameter and is long-sized, by enabling a proper amount of sublimation gas to be stably supplied during growth of a silicon carbide single crystal, especially, in the beginning of the crystal growth so as to efficiently and stably sublimate a silicon carbide raw material charged in a raw material charged part of a crucible.SOLUTION: There are provided a device and a method for manufacturing a silicon carbide single crystal ingot which comprise a crucible and a heat insulator, and manufacture the silicon carbide single crystal ingot by a sublimation recrystallization method. The device and method include: arranging a high heat insulation region which is high in thickness-directional heat insulation effect and a low heat insulation region which is low in heat insulation effect in a circumferential direction at a lower part of a heat insulator located at a periphery of a raw material charged part of a crucible; rotating the crucible and heat insulator relatively by a rotating mechanism on a center axis of the crucible as an axis of rotation; rotating the crucible and heat insulator relatively when manufacturing the ingot; and manufacturing the ingot while changing a temperature distribution in the raw material charged part in the circumferential direction.SELECTED DRAWING: Figure 2

Hiroshi Tsuge
Tatsuo Fujimoto
Masakazu Katsuno
Masashi Nakabayashi
Shinya Sato
Masashi Ushio

JP2017067248A

April 21, 2021

March 30, 2017

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SHOWA DENKO K.K.

C30B23/06; C30B29/36; F27B14/14

JP2014040357A
JP2017154926A

Atsushi Aoki
Shinji Mitsuhashi
Masatoshi Takahashi
Naori Kota
Hajime Kawahara
Yasuo Dogaki

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