シリコンベース電荷中和システム

Title:

シリコンベース電荷中和システム

Document Type and Number:

Japanese Patent JP7197530

Kind Code:

B2

Abstract:

An embodiment of the invention provides a method for low emission charge neutralization, comprising: generating a high frequency alternating current (AC) voltage; transmitting the high frequency AC voltage to at least one non-metallic emitter (300a); wherein the at least one non-metallic emitter comprises at least 70% silicon by weight and less than 99.99% silicon by weight; wherein the at least one emitter comprises at least one treated surface section (310a) with a destroyed oxidation layer; and generating ions from the at least one non-metallic emitter in response to the high frequency AC voltage. Another embodiment of the invention provides an apparatus for low emission charge neutralization wherein the apparatus can perform the above-described operations.

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Inventors:

Peter Jeffer
Alexei Krotchkov

Application Number:

JP2020038190A

Publication Date:

December 27, 2022

Filing Date:

March 05, 2020

Export Citation:

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Assignee:

Illinois Tours Works Inc.

International Classes:

H01J27/02; H01J27/16; H05F3/04

Domestic Patent References:

JP2010521795A
JP2012524976A
JP2013508924A
JP6140127A
JP2006108101A
JP2011065772A
JP2007141691A

Foreign References:

US20110096457

Attorney, Agent or Firm:

Aoki Atsushi
Shinji Mihashi
Kentaro Ito

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