Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019067982
Kind Code:
A
Abstract:
To provide a silicon carbide semiconductor device capable of improving ON-resistance characteristics.SOLUTION: For example, a pin diode is constituted of a silicon carbide epitaxial substrate 10 where silicon carbide epitaxial layers becoming an n-type buffer region 2, an n-type drift region 3 and a p-type anode region 4 are epitaxially grown, in order, on the front surface of an n-type silicon carbide substrate 1. The n-type impurity concentration of the ntype drift region 3 is 1×10/cm-1×10/cm, for example. Boron concentration of the ntype drift region 3 is sufficiently lower than the n-type impurity concentration of the ntype drift region 3, and is 1×10/cmor less, for example. The ntype drift region 3, where trap does not exist substantially, is formed by restraining auto-doping of boron to the ntype drift region 3, during epitaxial growth thereof, thereby lowering the boron concentration of the ntype drift region 3.SELECTED DRAWING: Figure 1
Inventors:
MATSUNAGA SHINICHIRO
Application Number:
JP2017193856A
Publication Date:
April 25, 2019
Filing Date:
October 03, 2017
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L29/861; H01L21/20; H01L21/205; H01L21/329; H01L21/331; H01L21/336; H01L29/12; H01L29/732; H01L29/74; H01L29/78; H01L29/868
Domestic Patent References:
| JP2010045363A | 2010-02-25 | |||
| JP2012178412A | 2012-09-13 |
Other References:
J. ZHANG, L. STORASTA, J. P. BERGMAN, N. T. SON, AND E. JANZEN: "Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor", JOURNAL OF APPLIED PHYSICS, vol. Volume 93, Issue 8, JPN6021033746, 28 March 2003 (2003-03-28), pages 4708, ISSN: 0004789700
Attorney, Agent or Firm:
Akinori Sakai