Title:
炭化珪素半導体装置
Document Type and Number:
Japanese Patent JP7331590
Kind Code:
B2
Abstract:
To suppress basal surface dislocation contained in a silicon carbide single crystal substrate from developing to a layer defect.SOLUTION: The silicon carbide semiconductor device, including a silicon carbide single crystal substrate 10 having one face 10a and another face 10b on the opposite side to the one face 10a and an epitaxial layer 12 constituted of silicon carbide arranged on the one face 10a, is structured so that more impurity element 11a than the another face 10b side is arranged on the one face 10a side in the silicon carbide single crystal substrate 10.SELECTED DRAWING: Figure 1
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Inventors:
Yuusuke Hayama
Uehara Junichi
Takehiro Kato
Yusuke Yamashita
Uehara Junichi
Takehiro Kato
Yusuke Yamashita
Application Number:
JP2019177024A
Publication Date:
August 23, 2023
Filing Date:
September 27, 2019
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L29/78; C30B23/06; C30B29/36; H01L21/205; H01L21/322; H01L21/336; H01L29/12; H01L29/739
Domestic Patent References:
| JP2019102493A | ||||
| JP2021014378A | ||||
| JP2013107788A | ||||
| JP2013183064A | ||||
| JP2007246350A | ||||
| JP2019140242A | ||||
| JP2009167047A | ||||
| JP2017038001A | ||||
| JP2019009288A | ||||
| JP2017065955A | ||||
| JP2017065959A |
Foreign References:
| WO2015064256A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Yuuai Patent Office
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